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Home > Offers to Sell > Electronics & Electrical > Insulation, Accessories & Others > Other Electrical Equipment
| Contact: | Adela |
|---|---|
| Company: | Shanghai GaNova Electronic Information Co., Ltd. |
| Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai | |
| shanghai 200000 | |
| China | |
| Phone: | 86-159-62257010 |
| Fax: | 86-159-62257010 |
| E-Mail: |   |
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| Date/Time: | 6/12/23 9:40 GMT |
2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity >
106 Ω·cm RF devices
The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001)
substrates were studied using metalorganic chemical vapor deposition for high
breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be
realized by changing the ferrocene flow, while higher Fe concentrations in the GaN
epilayer affect the surface morphology.
SOURCE: Import-Export Bulletin Board (https://www.imexbb.com/)
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