Mosfet PRPAK5x6

Specification:
1. Model FKBA4086 40V Single N RDS=1mΩ
2. Model FKBA4204 40V Dual N RDS=15mΩ
3. Model FKBA3031 -30V Single P RDS=2.5mΩ
4. Model FKBA4905 40V N+P RDS=2.5mΩ

General description:
It is the N-Channel logic enhancement mode power field effect transistors
are produced using high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
notebook computer power management and other battery powered circuits where
Low-side switching, and low in-line power loss are needed in a very small
outline surface mount package

With more than 15 years of MOSFET experience, MU-HUA is the best MOSFET
supplier manufactures SOT23 MOSFET, TO220 MOSFET and TO252 MOSFET supplying
to the world. The metal–oxide–semiconductor field-effect transistor
(MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET),
most commonly fabricated by the controlled oxidation of silicon. It has an
insulated gate, the voltage of which determines the conductivity of the
device. This ability to change conductivity with the amount of applied
voltage can be used for amplifying or switching electronic signals.

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