OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A

The value of R θJA is measured with the device mounted on 1in 2 FR-4 board
with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the
PCB allows it.
The power dissipation P D is based on T J(MAX) =175°C, using junction-to-case
thermal resistance, and is more useful in setting the upperdissipation limit
for cases where additional heatsinking is used.
Repetitive rating, pulse width limited by junction temperature T J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial T J
=25°C.
The R θJA is the sum of the thermal impedence from junction to case R θJC and
case to ambient.
The static characteristics in Figures 1 to 6 are obtained using <300µs pulses,
duty cycle 0.5% max.
These curves are based on the junction-to-case thermal impedence which is
measured with the device mounted to a large heatsink, assuming a maximum
junction temperature of T J(MAX) =175°C. The SOA curve provides a single pulse
rating.
The maximum current rating is package limited.
These tests are performed with the device mounted on 1 in 2 FR-4 board with
2oz. Copper, in a still air environment with T A =25°C.


this product has been designed and qualified for the consumer market.
applications or uses as critical
components in life support devices or systems are not authorized. aos does not
assume any liability arising
out of such applications or uses of its products. aos reserves the right to
improve product design,
functions and reliability without notice.

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