3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP

2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm
C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness

About synthetic sapphire crystal
Sapphire Properties
GENERAL
Chemical Formula Al2O3
Crystal Stucture Hexagonal System ((hk o 1)
Unit Cell Dimension a=4.758 Å,Å c=12.991 Å, c:a=2.730
PHYSICAL
Metric English (Imperial)
Density 3.98 g/cc 0.144 lb/in3
Hardness 1525 - 2000 Knoop, 9 mhos 3700° F
Melting Point 2310 K (2040° C)
STRUCTURAL
Tensile Strength 275 MPa to 400 MPa 40,000 to 58,000 psi
at 20° 400 MPa 58,000 psi (design min.)
at 500° C 275 MPa 40,000 psi (design min.)
at 1000° C 355 MPa 52,000 psi (design min.)
Flexural Stength 480 MPa to 895 MPa
70,000 to 130,000 psi
Compression Strength 2.0 GPa (ultimate) 300,000 psi
(ultimate)

The Kyropoulos process (KY process) for sapphire crystal growth is currently
used by many companies in China to produce sapphire for the electronics and
optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees
Celsius. Typically the crucible is made of tungsten or molybdenum. A
precisely oriented seed crystal is dipped into the molten alumina. The seed
crystal is slowly pulled upwards and may be rotated simultaneously. By
precisely controlling the temperature gradients, rate of pulling and rate of
temperature decrease, it is possible to produce a large, single-crystal,
roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into
cylindrical rods, The rods are sliced up into the desired window thickness
and finally polished to the desired surface finish.

3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP
0.43mm 0

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