Lithium Niobate on Insulator Substrates LNOI

Lithium Niobate Thin Films on Insulator is kind of POI (Piezoelectric on
Insulator) wafer. It’s stacked sequence structure is made of support
substrates that can be silicon, quartz, fused silica, sapphire or LN wafer, the
interlayer is thermal oxide SiO2 that works as insulator and lithium niobate
film is the functional layer above the insulation layer.
POI /LNOI engineered substrates enable the design of filters with high quality
factor, large bandwidth, very low temperature sensitivity and low insertion
loss with a simple device manufacturing technology. These wafers are developed
and used for high-speed modulators, high Q factor SAW devices, IR-detectors,
THz devices.
Key Advantages of LNOI Thin Film Wafers
LNOI substrates provide multiple technical benefits that make them ideal for
advanced electronic and photonic devices.
1. High Quality Factor (Q Factor)
Devices fabricated on LNOI wafers demonstrate exceptionally high Q factors,
which improves signal stability and performance in RF filters and resonators.
2. Large Bandwidth Performance
The optimized thin-film structure supports high-frequency operation, making
LNOI suitable for modern wireless communication technologies such as:

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