plasma enhanced chemical vapor deposition coating machine

CY-PECVD-450 chemical vapor deposition adopts plasma enhanced chemical vapor
deposition technology, which can use high-energy plasma to promote the reaction
process, effectively increase the reaction speed and reduce the reaction
temperature.

It is suitable for depositing thin films of silicon nitride, amorphous silicon
and microcrystalline silicon on different substrates such as optical glass,
silicon, quartz and stainless steel.
It has good film-forming quality, less pinholes and is not easy to crack. It is
suitable for the preparation of amorphous silicon and microcrystalline silicon thin
film solar cell devices.
It can be widely used in the scientific research and small batch preparation of
thin film materials in Colleges and universities and scientific research
institutes.

Technical parameter
Type CY-PECVD-450
Vacuum chamber front opening door，φ300mm X 300mm，stainless steel
viewing window：φ100mm with baffle
Vacuum pump set Backing pump: rotary vane pump pumping speed is 1.1L/s
Secondary pump: Turbo molecular pump pumping speed 600L/s
Limiting vacuum 10-6Pa
10-4Pa（Within 30 minutes）
Vacuum（deposition） 0.133~133Pa，adjusted according to the process
RF power 13.56MHz，500W (automatch)
Flow control mass flowmeter（default Ar,0~200sccm）
Dimensions 1100mm x 800mm x1100mm

Minimum Order: 1 sets

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