Chemical Equipment & Lab Supplies

10L plasma cleaner is a compact, non-destructive cleaning device. The plasma cleaner uses low air pressure to excite plasma as a cleaning medium, thereby effectively avoiding secondary pollution caused by the liquid cleaning medium to the object to be cleaned.The device is equipped with a mechanical vacuum pump, while vacuuming maintains the vacuum of the chamber, the pollutants after the plasma reaction can also be pumped away by the vacuum pump; therefore, the short- time cleaning can completely clean the organic pollutants. In addition to the cleaning function, this small plasma cleaner can change the surface properties of some materials according to the needs under certain conditions. During the cleaning process, the glow discharge of the small plasma cleaner not only enhances the adhesion, compatibility and wettability of these materials, but also disinfects and sterilizes the materials. Applications: Small plasma cleaners are widely used in the fields of optics, optoelectronics, electronics, materials science, life sciences, polymer science, biomedicine, and microfluidics. Technical parameters: 1. Cleaning chamber Chamber material High purity quartz Chamber size Diameter 200 mm; Length 340 mm 2. RF power supply Power supply features:The power supply is an all-solid-state RF power supply, and adopts a high-stability and high-reliability power amplifier module and a DC module, which effectively ensures the RF power output of the power supply. High quality electronic components are used to ensure the reliability of the products. Power advantage ● Long time normal operation ● Simple and flexible operation ● High power supply efficiency and low heat generation ●With perfect reflection power protection function RF power 0~100W continuously adjustable / 0~150W   continuously adjustable Signal frequency 13.56MHz   ±0.005% Reflected power ≤100W Power stability ±0.1% RF connector N type connector Machine efficiency ≥75% Harmonic component ≤-50 dBc cooling method Forced air cooling 3.Gas measurement Measuring unit Float flowmeter Gas channel Two channels A channel range 10～100ml B channel range 16～160ml 4.Vacuum system Vacuum measurement Digital vacuum gauge (resistance gauge) Vacuum pump Two-stage rotary vane vacuum pump Motor speed 50 Hz: 1440; 60 Hz: 1720 Pumping rate 50 Hz: 1.1L/s; 60 Hz: 1.3L/s Vacuum range 0.1Pa～10000Pa Ultimate vacuum 0.5Pa Motor noise ≤56dB Pipe interface Gas inlet: KF16; exhaust port KF16. Connecting pipe KF16 vacuum bellows Vacuum valve Solenoid valve Motor Power 400W 5.Others Power supply AC220V 50/60Hz Total power 1000W/1500W Operating temperature -10℃-40℃ Working vacuum ≤40Pa Overall size 600mm×650mm×730mm Total Weight 80kg (including packaging)

Minimum Order: 1 bags

2L plasma cleaner is a compact, non-destructive cleaning device. The plasma cleaner uses low air pressure to excite plasma as a cleaning medium, thereby effectively avoiding secondary pollution caused by the liquid cleaning medium to the object to be cleaned.The device is equipped with a mechanical vacuum pump, while vacuuming maintains the vacuum of the chamber, the pollutants after the plasma reaction can also be pumped away by the vacuum pump; therefore, the short- time cleaning can completely clean the organic pollutants. In addition to the cleaning function, this small plasma cleaner can change the surface properties of some materials according to the needs under certain conditions. During the cleaning process, the glow discharge of the small plasma cleaner not only enhances the adhesion, compatibility and wettability of these materials, but also disinfects and sterilizes the materials. Applications: Small plasma cleaners are widely used in the fields of optics, optoelectronics, electronics, materials science, life sciences, polymer science, biomedicine, and microfluidics. Technical parameters: 1. Cleaning chamber Chamber material High purity quartz Chamber size Diameter 100 mm; Length 270 mm 2. RF power supply Power supply features:The power supply is an all-solid-state RF power supply, and adopts a high-stability and high-reliability power amplifier module and a DC module, which effectively ensures the RF power output of the power supply. High quality electronic components are used to ensure the reliability of the products. Power advantage ● Long time normal operation ● Simple and flexible operation ● High power supply efficiency and low heat generation ●With perfect reflection power protection function RF power 0~100W continuously adjustable / 0~150W   continuously adjustable Signal frequency 13.56MHz   ±0.005% Reflected power ≤100W Power stability ±0.1% RF connector N type connector Machine efficiency ≥75% Harmonic component ≤-50 dBc cooling method Forced air cooling 3.Gas measurement Measuring unit Float flowmeter Gas channel Two channels A channel range 10～100ml B channel range 16～160ml 4.Vacuum system Vacuum measurement Digital vacuum gauge (resistance gauge) Vacuum pump Two-stage rotary vane vacuum pump Motor speed 50 Hz: 1440; 60 Hz: 1720 Pumping rate 50 Hz: 1.1L/s; 60 Hz: 1.3L/s Vacuum range 0.1Pa～10000Pa Ultimate vacuum 0.5Pa Motor noise ≤56dB Pipe interface Gas inlet: KF16; exhaust port KF16. Connecting pipe KF16 vacuum bellows Vacuum valve Solenoid valve Motor Power 400W 5.Others Power supply AC220V 50/60Hz Total power 550W/600W Operating temperature -10℃-40℃ Working vacuum ≤40Pa Overall size 540mm×500mm×440mm Total Weight 58kg (including packaging)

Minimum Order: 1 bags

Wafer level large-size molybdenum disulfide preparation device This equipment is a wafer level large-size molybdenum disulfide preparation device designed based on CVD principles. It includes a three-zone tube furnace, a specially designed furnace tube and a set of supporting gas circuits. The equipment can uniformly release the reaction gas into the furnace tube through a specially designed pipeline to ensure the consistency and uniformity of the product on the back-end wafer. It is the best choice for molybdenum disulfide preparation experiments. Technical parameters: 1. Product model CY-O1200-120III-IC-3Z-MoS2 2. Furnace tube material High purity quartz 3. Furnace tube size External large quartz tube φ120mm x1000mm 4. Internal small quartz tube φ25mm x820mm x7 5. Temperature zone length Three heating zone 200mm+200mm+200mm 6. Temperature control accuracy ±1℃ 7. Temperature curve Independent temperature control in three temperature zones, each temperature zone can be set with 30-segment time temperature curve 8. Operating temperature 0~1150℃ 9. Heating rate ≤10℃/min 10. Intake system:Three-channel mass flow meter:Ar gas 0~500sccm,N2 gas 0~200sccm,H2 gas 0~200sccm Equipped with seven channels of gas separation, gas mixing gas path. 11. Furnace pipe flange Stainless steel water-cooled flange, equipped with KF16 vacuum interface, mechanical vacuum gauge and stainless steel needle valve 12. Power requirements AC 220V 50Hz 4kW 13. Control mode 7-inch touch screen 14. Vacuum pump Dual stage rotary vane vacuum pump 15. Vacuum Theoretical ultimate vacuum degree 10^-1Pa

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This set CVD equipment is a miniaturized CVD system, the core of which is a mini tube furnace, which uses resistance wire heating, and the maximum temperature of the equipment can reach 1200°C. The instrument also contains a three-channel float flow meter and a molecular pump set, which respectively constitute the inlet and outlet gas parts of the CVD. There is a digital display vacuum gauge on the right side of the furnace tube to control the vacuum degree and atmosphere environment inside the furnace tube. The system adopts PID intelligent temperature control, and the temperature control accuracy can reach ±1℃. The tube furnace adopts temperature control meter operation in operation, can preset the temperature control curve, one-button start and stop, easy to use, can simplify the experiment operation and save the experiment time. The high-vacuum molecular pump group can effectively increase the background vacuum and improve the quality of the reaction product. Technical parameters: 1. 1200℃ mini-tube furnace parameters Supply voltage AC220V, 50Hz Maximum power 2KW Heating zone Single heating zone 200mm Constant temperature zone head 100mm Heating element Heat-resistant alloy wire Thermocouple K type Operating temperature ≤1150℃ Heating rate Suggest ≤10℃/min Temperature control accuracy ±1℃ Temperature control method AI-PID 30-segment process curve, with overheat and thermocouple failure protection Furnace tube material High purity quartz Furnace tube size φ50mm O.D x 450mm L Vacuum pump Mechanical pump pumping speed 1.1L/s Ultimate vacuum 5Pa 2. Three-channel float flowmeter parameters Valve type Stainless steel needle valve Number of gas paths Three Pressure range 0.05~0.3MPa Range 160 SCCM (Air) Mixing tank volume 750mL Gas path material 304 stainless steel Pipe interface 6.35mm ferrule connector 3. Molecular pump parameters Product number CY-GZK103-A Molecular pump Turbomolecular pump Backing pump Two-stage rotary vane pump Pumping rate Molecular pump: 6000L/S Comprehensive pumping performance: 30 minutes vacuum can reach: 5×10E-3Pa Rotary vane pump: 1.1L/S Ultimate vacuum 5×10E-4Pa Pumping port KF40 Exhaust interface KF16 Vacuum measurement Compound vacuum gauge

Minimum Order: 1 bags

This CVD system is specially designed for graphene production, using a 1200℃ mini tube furnace, equipped with a high-precision mass flow meter and a thin-film vacuum gauge. Compared with the conventional Pirani resistance gauge, the reading of the thin film gauge is accurate and not affected by the type of gas, which is very suitable for the vacuum coating process. At the same time, the equipment is equipped with a combustible gas detection device, which is linked with a solenoid valve at the air outlet. Once there is a leakage, the solenoid valve can be closed to ensure safety. This set of equipment has a small footprint and is very suitable for laboratory preparation of CVD. Technical parameters: 1. 200℃ Mini Tube Furnace Parameters: Supply voltage AC220V, 50Hz Maximum power 2KW Heating zone Single heating zone 200mm Constant temperature zone length 100mm Heating element Heat-resistant alloy wire Thermocouple Type K Operating temperature ≤1150℃ Heating rate Suggest ≤10℃/min Temperature control accuracy ±1℃ Temperature control method AI-PID 30-segment process curve, with overheat and burnout protection Furnace tube material High purity quartz Furnace tube size φ50mm O.D x 450mm L Vacuum pump Mechanical pump pumping speed 1.1L/s Ultimate vacuum 5Pa 2. Three-channel mass flow meter parameters: Valve type Stainless steel needle valve Number of gas paths Three Pressure range 0.05~0.3MPa Range Ar 0~500sccm H2 0~200sccm CH4 0~10sccm Flow control range ±1.5% Mixing tank volume 750mL Gas path material 304 stainless steel Pipe interface 6.35mm ferrule connector Power supply AC220V 50Hz

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This product is a plasma-enhanced rotary chemical vapor deposition system (rotating PECVD). The furnace tube adopts a variable-diameter design. The middle tube diameter is relatively thick and there are mixing partitions, which can repeatedly mix powder or particles with the rotation of the furnace tube. The working tube can be rotated 360° uninterruptedly through the mechanical transmission control, so that the materials in the tube can be stirred and mixed to obtain a uniform heating effect; the equipment is also equipped with a plasma generator, which is connected to the furnace tube by inductive coupling, and the generated plasma can cover the furnace tube effectively, increase the activation energy of the reactants, reduce the reaction temperature, and improve the reaction efficiency. The equipment is equipped with a three-way mass flow meter and a gas mixing device, which can be used to pass a variety of gases into the pipe. At the same time, the equipment is equipped with a high-performance mechanical pump that can quickly evacuate the furnace pipe to vacuum; the cooperation of the pump and the gas circuit can achieve more A CVD process. The rotating device is very suitable for continuously coating and modifying powder materials by CVD method in an atmosphere protected environment. Technical Parameters 1. Dual temperature zone tube furnace Product model CY-O1200-60IIC-R Equipment power 3KW Furnace tube material High purity quartz Furnace tube size Φ60*420+Φ100*360+Φ60*420mm (Quartz heteromorphic tube) Furnace chamber length 440mm Heating zone length 200mm+200mm Operating temperature 0～1150℃ Limit temperature 1200℃ Temperature control accuracy ±1℃ Thermocouple type K-type thermocouple Temperature control mode 30-segment program temperature control, PID parameter self-tuning Display mode HD full color LCD touch screen Sealing method 304 stainless steel vacuum flange Power supply AC: 220V 50/60Hz Rotation speed 0~13rpm Tilt angle 0~35° 2. 3-channel mass flow meter Product model CY-3Z Number of gas paths 3 channels Flowmeter type Mass flowmeter Measuring range A channel: 0~100sccm; B channel: 0~200 sccm; C channel: 0~500 sccm Measurement accuracy ±1.5% Working pressure difference 0.1~0.5MPa Pipeline interface 1/4 inch ferrule connector Power supply AC220V 50/60Hz 3. Vacuum system Vacuum pump Dual stage rotary vane pump Pumping speed 1.1L/s Pumping port KF16 Pump ultimate vacuum Power supply AC220V 50/60Hz 4. RF power supply Signal frequency 13.56MHz±0.005% Power output range 0~500W Maximum reflected power 100W RF output interface 50Ω, N-Type, female Power stability ≤5W

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Single heating zone rotary plasma CVD reactor with vacuum automatic feeder Single heating zone rotary PECVD, equipped with vacuum automatic feeder, and KF40 interface reserved at the end of the furnace tube can be connected to the receiving tank. The feeder adopts screw feeding, the powder can be fed into the furnace tube at a rated rate, and the feeding rate can be changed by adjusting the rotary speed. It can realize the continuous coating and modification of powder materials by PECVD method under the atmosphere protection environment. The receiving tank can collect the processed powder under the atmosphere protection environment. The equipment is equipped with 100W RF power at 13.56MHz. It can generate plasma in vacuum. High-energy plasma can activate the sample surface, effectively enhance the reaction effect and increase the reaction rate. This auxiliary method is widely used in scientific experiments such as graphene preparation and particle coating. This equipment is especially suitable for granular sample experiments. Through mechanical transmission, it can control the continuous rotation of the working tube 360° with adjustable rotation speed, so that the materials in the tube are continuously stirred and mixed, and fully contact with the gas and plasma, so that the reaction of the sample is more uniform and stable. Technical parameters： 1. RF power supply Output Power 150W Output accuracy ±1% RF frequency 13.56MHz RF stability ±0.005% Cooling method Air-cooling 2. 1200℃ Single heating zone tube furnace Supply voltage AC220V，50Hz Maximum power 2KW Heating zone Single heating zone 200mm Working temperature Maximum 1200 ℃, continuous operating temperature should be ≤1100 ℃ Temperature accuracy ± 1 ℃ Temperature control method AI-PID 30-stage process curve, can store multiple 3. Three temperature zone independent control, with overheat and thermocouple failure protection Furnace tube material High purity quartz Furnace tube size Dia. 50x800mm Sealing method Vacuum stainless steel flange, KF16 flange Adjustable speed 0-20rpm Tilt Angle 0-15° Vacuum pump Rotary vane mechanical pump Ultimate vacuum 1.0E-1Pa Feeding method Vacuum funnel and screw feed

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This equipment is a plasma-enhanced rotating graphene preparation system. The equipment is composed of a rotating and tilting mechanism, a single heating zone tube furnace, a plasma generator, a mass flow meter gas delivery system, and a high vacuum molecular pump unit. Compared with other graphene preparation equipment, this equipment can provide a higher background vacuum, which can improve the quality of the product; it can use the rotation and tilt mechanism to achieve continuous production, and can make the surface of the particle sample grow products evenly; the plasma generator can significantly reduce the reaction temperature and improve the reaction efficiency. Technical parameters: 1. Single heating zone tube furnace Product model CY-O1200-100IT Furnace tube material High purity quartz Tube diameter 100mm Furnace tube length 1500mm Furnace chamber length 440mm Heating zone length 400mm Constant temperature zone head 200mm Operating temperature 0～1100℃ Temperature control accuracy ±1℃ Temperature control mode 30 or 50 segment program temperature control Display mode HD full color LCD touch screen Sealing method 304 stainless steel vacuum flange Power supply AC: 220V 50/60Hz 2.RF output system Power range 0~500W adjustable working frequency 13.56MHz+0.005% Working mode Continuous output Matched impedance mode It can be matched, and the glow is evenly distributed throughout the furnace tube Power stability ≤2W Normal working reflected power ≤3W Amplified reflected power ≤70W Harmonic component ≤-50dBc Overall efficiency ≥70% Power Factor ≥90% Supply voltage/frequency Single-phase AC (187V~153V) frequency 50/60Hz Control mode Internal control/PLC analog quantity/RS232/485 communication Power protection settings DC over current protection, power amplifier over temperature protection, reflected power protection Cooling method Forced air cooling Glow zone Under Ar, the radio frequency power supply and the coil cooperate with the glow to fill the furnace tube 3. Gas delivery system Flowmeter Four-channel mass flowmeter Flow range MFC1 range: 0~200sccm MFC2 range: 0~200sccm MFC3 range: 0~500sccm MFC4 range: 0~500sccm Corresponding to gases H2, CH4, N2, Ar. Measurement accuracy ±1.5%F.S Repeatability ±0.2%FS Linear accuracy ±1%F.S. Response time ≤4s Work pressure -0.15Mpa~0.15Mpa Flow control LCD touch screen control, digital display, each channel gas contains needle valve for individually control. Intake Interface It can be connected with 1/4NPS or 6mm outer diameter stainless steel pipe Outlet Interface It can be connected with 1/4NPS or 6mm outer diameter stainless steel pipe Connection method Double ferrule connector Operating temperature 5~45℃ Gas premix Equipped with gas premixing device 4.Exhaust system Product model CY-GZK103-A Molecular pump Turbomolecular pump Backing pump Two-stage rotary vane pump Pumping rate Molecular pump: 600L/S Comprehensive pumping performance: 30 minutes vacuum can reach: 5×10E-3Pa Rotary vane pump: 1.1L/S Ultimate vacuum 5×10E-4Pa Pumping port KF40 Exhaust interface KF16 Vacuum measurement Compound vacuum gauge 5.Rotating and tilting device Speed range 0-20rpm Tilt angle 0-15° Material feeding and receiving system Automatic feeding, automatic collection after tilting

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PECVD with roll to roll systemis a plasma enhanced chemical vapor deposition device (PECVD) equipped with a roll-to-roll movement system. It is not only used in the continuous heat treatment process of wire rod, such as the preparation of carbon fiber, the modification of alloy and other materials wire rod, but also used for the continuous growth of graphene on the coil. The equipment is composed of five parts: a roll-to-roll movement system, 1200℃2- heating-zone open tube furnace, PE plasma enhancement system, vacuum system and three-way proton flowmeter gas supply system. The whole system can work in the vacuum / atmosphere protection environment. The speed of the winding device can be adjusted from 1 to 400mm / min, and the mechanism adopts feedback adjustment, which can automatically correct the speed deviation and ensure the speed stability of the sample, thus ensuring the accuracy of the experiment..  Technical parameter: 1. 1200℃2-heating-zone open tube furnace Voltage AC220V,50Hz Max power 3KW Heating zone Dual zones 200mm+200mm Working temperature ≤1200℃ Temperature control accuracy ±1℃ Temperature control method AI-PID 30-stage process curve, can store multiple Tube material High purity quartz Tube size φ80mm I.D x 1400mm L Sealing mode Stainless steel vacuum flange Vacuum measurement Resistance gauge Working gas Non-corrosive gases such as hydrogen, nitrogen, argon, and oxygen Vacuum pump Bipolar rotary vane vacuum pump Ultimate vacuum 10^-1Pa 2.Three-way mass flowmeter Valve type Stainless steel needle valve Gas channels Three-way Pressure range 0.05~0.3MPa Range 0~100 SCCM (Ar);0~200 SCCM(H2);0~500 SCCM(CH4) Flow control range ±1.5% Mixing tank volume 750mL Gas path material 304 stainless steel Pipe interface 6.35mm Bite type joint Power supply AC220V 50Hz 3.RF power Output Power 500W Output accuracy ±1% RF frequency 13.56MHz RF stability ±0.005% Cooling method Water cooling

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1200C PE-HPCVD Two Zone Furnace with In-situ Evaporator, 4 Channel MFC and Vacuum Pump (import molecular pump, without oil)+INFICON vacuumeter CY-OTF-1200X-II-PEC4 is a 1200ºC Two-Zone Plasma-Enhanced Hybrid-Physical- Chemical Vapor Deposition (PE-HPCVD) system. It consists of a Tiltable Frame, 300W RF Plasma Generator & Matching Network, Up-Stream Source Evaporation Boat with Power Supply, Four-Channel MFC Gas Delivery, and High-Performance Vacuum Pump. Such a complete system is an excellent tool for heat-treating inorganic compound powders with superior temperature and surface coating uniformity (e.g. prepare Li-Ion battery cathode powders with conductive coatings on the surface). System Structure Integrated 300W (13.56Mhz) RF power supply with matching network enables the plasma-enhanced processing which significantly reduces the needs for high- temperature process Quartz tube allows processing for powders Four-channel gas mixing station with MFCs provide precise control of gas delivery The integration of Up-Stream Source Evaporation Boat with tungsten coil allows you sublimate solid precursors for the needs of Hybrid Physical-Chemical processing

Minimum Order: 1 bags

1200C PE-HPCVD Two Zone Furnace with In-situ Evaporator, 4 Channel MFC and Vacuum Pump (import molecular pump, without oil)+INFICON vacuumeter CY-OTF-1200X-II-PEC4 is a 1200ºC Two-Zone Plasma-Enhanced Hybrid-Physical- Chemical Vapor Deposition (PE-HPCVD) system. It consists of a Tiltable Frame, 300W RF Plasma Generator & Matching Network, Up-Stream Source Evaporation Boat with Power Supply, Four-Channel MFC Gas Delivery, and High-Performance Vacuum Pump. Such a complete system is an excellent tool for heat-treating inorganic compound powders with superior temperature and surface coating uniformity (e.g. prepare Li-Ion battery cathode powders with conductive coatings on the surface). System Structure Integrated 300W (13.56Mhz) RF power supply with matching network enables the plasma-enhanced processing which significantly reduces the needs for high- temperature process Quartz tube allows processing for powders Four-channel gas mixing station with MFCs provide precise control of gas delivery The integration of Up-Stream Source Evaporation Boat with tungsten coil allows you sublimate solid precursors for the needs of Hybrid Physical-Chemical processing

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MPCVD single crystal diamond deposition equipment Application Preparation of high-quality single crystal diamond; Preparation of high-quality polycrystalline free-standing diamond films; Preparation of high quality polycrystalline diamond films; Preparation of various carbon nano films such as graphene, carbon nanotubes, fullerenes and diamond films. Features a.Stainless steel cavity type 6kw microwave plasma equipment, high power density; b.The water-cooled substrate stage and the water-cooled metal chamber ensure the system can work stably for a long time; c.The substrate temperature is achieved by microwave plasma self-heating; d.The vacuum measuring instrument adopts a full-range vacuum gauge, which can accurately measure the background vacuum and working gas pressure; e.The vacuum pump and valve adopt turbo molecular pump (the ultimate vacuum is 1×10-5Pa) and the rotary vane mechanical vacuum pump (the ultimate vacuum is 1Pa), and the system can automatically control the deposition pressure; f.Cooling water circulation system to ensure long-term safe and stable operation of the device under high power; g.15-inch touch screen, PLC automatic control, can set the temperature or pressure to be constant, can save and reuse up to 20 sets of process files; Fully automatic process control module, which can stably and reliably prepare high- quality diamond films and crystals

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This equipment is customized plasma testing equipment for customers. The main component of the equipment is an inductively coupled plasma generator. The generator can generate plasma in the quartz tube inside the inductance coil. The flanges on both sides of the quartz tube are equipped with observation windows. Users can observe experimental phenomena on the observation window or use other The instrument measures relevant parameters. The device is controlled by a touch screen, and the screen integrates all experimental functions, such as vacuum extraction, flow control, and RF power adjustment. At the same time, the inductance coil adopts water cooling design, and the outer casing has a cooling fan to ensure the stability of the whole equipment for a long time. This equipment is an indispensable instrument for the research of plasma-related properties in college laboratories. Technical parameter Supply voltage:AC220V，50Hz Maximum power: 1KW Coupling method: Inductive coupling Quartz cavity: O.Dφ30mm X 150mm wall thickness 3.5mm Observation window size: φ30mm Vacuum interface: KF16 Air inlet interface: 6.35mm ferrule connector Mass flowmeter: Ar calibration range 100sccm Vacuum pump: Bipolar rotary vane vacuum pump Ultimate vacuum: 0.1Pa cooling method: Water-cooled copper tube + air-cooled shell RF power supply: Maximum output power 300W Automatic matching Overall size: 560mm X 620mm X 620mm

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Introduction CY-SPC12-BXG spin coater is with vacuum chuck designed for easy and quick coating via sol-gel for wafers up to 12" diameter. This spin coater adopts advanced precision motor, the maximum speed can reach 5000rpm, which effectively guarantees the uniformity of film formation. Besides, the instrument adopts touch screen control, can preset the coating curve, which greatly simplifies the process. Application Liquid or colloidal materials can be coated on silicon wafers, crystals, quartz, ceramics and other substrates to form thin films, mainly used in photoresist spin coating, biological medium production, sol-gel method for polymer film production, etc. Technical parameters 1. Input power supply AC220V, 50Hz 2. Chamber material stainless steel 3. Substrate size Diameter≤12 inches (~300mm) 4. Spin speed 0-5000rpm 5. Acceleration 100-5000rpm/s 6. Speed resolution 1rpm 7. Single step time 3000s 8. Operation method 7 inches HD LCD touch screen 9. Dispensing method Manual dispensing 10. Coating curve Each curve has 5 segments, can store 5 curves in total 11. Vacuum chuck Yes, includes 12. Vacuum pump Oil-less pump 13. Pumping speed 50 L/min 14. Total weight ~40kg

Minimum Order: 1 bags